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MT41K512M8RH-125 V:E TR

MT41K512M8RH-125 V:E TR

  • 厂商:

    MICRON(镁光)

  • 封装:

    TFBGA-78

  • 描述:

    IC DRAM 4GBIT PARALLEL 78FBGA

  • 数据手册
  • 价格&库存
MT41K512M8RH-125 V:E TR 数据手册
4Gb: x8, x16 DDR3L SDRAM Addendum Description Addendum DDR3L SDRAM MT41K512M8RH-125 V:E MT41K256M16HA-125 V:E MT41K512M8DA-107 V:P MT41K256M16TW-107 V:P Description • • • • DDR3L SDRAM (1.35V) is a low voltage version of the DDR3 (1.5V) SDRAM. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode. Automatic self refresh (ASR) Write leveling Multipurpose register Output driver calibration Options Marking • Configuration – 512 Meg x 8 – 256 Meg x 16 • FBGA package (Pb-free) – x8 – 78-ball (9mm x 10.5mm) Rev. E – 78-ball (8mm x 10.5mm) Rev. P • FBGA package (Pb-free) – x16 – 96-ball (9mm x 14mm) Rev. E – 96-ball (8mm x 14mm) Rev. P • Timing – cycle time – 1.071ns @ CL = 13 (DDR3-1866) – 1.25ns @ CL = 11 (DDR3-1600) • Special options – Visual inspection • Operating temperature – Commercial (0°C ≤ T C ≤ +95°C) – Industrial (–40°C ≤ T C ≤ +95°C) • Revision Features • VDD = V DDQ = 1.35V (1.283–1.45V) • Backward compatible to V DD = V DDQ = 1.5V ±0.075V – Supports DDR3L devices to be backward compatible in 1.5V applications • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Programmable CAS (READ) latency (CL) • Programmable posted CAS additive latency (AL) • Programmable CAS (WRITE) latency (CWL) • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) • Selectable BC4 or BL8 on-the-fly (OTF) • Self refresh mode • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C • Self refresh temperature (SRT) 512M8 256M16 RH DA HA TW -107 -125 V None IT :E/:P Table 1: Key Timing Parameters Speed Grade Data Rate (MT/s) Target tRCD-tRP-CL -1071 1866 13-13-13 13.91 13.91 13.91 -125 1600 11-11-11 13.75 13.75 13.75 Note: tRCD (ns) tRP (ns) CL (ns) 1. Backward compatible to 1600, CL = 11 (-125). 09005aef858c7838 4Gb_DDR3L_addendum.pdf - Rev. C 7/16 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 4Gb: x8, x16 DDR3L SDRAM Addendum Description Table 2: Addressing Parameter Configuration 512 Meg x 8 256 Meg x 16 64 Meg x 8 x 8 banks 32 Meg x 16 x 8 banks Refresh count 8K 8K Row address 64K (A[15:0]) 32K (A[14:0]) Bank address 8 (BA[2:0]) 8 (BA[2:0]) Column address 1K (A[9:0]) 1K (A[9:0]) 1KB 2KB Page size Figure 1: DDR3L Part Numbers Example Part Number: MT41K512M8RH-125 V:E - Configuration Package Speed Revision { MT41K : :E/:P Configuration Mark Temperature Mark 512 Meg x 8 512M8 Commercial None 256 Meg x 16 256M16 Industrial temperature Special Options Note: Revision Package 78-ball 9mm x 10.5mm FBGA Re v. E Mark RH Visual inspection 78-ball 8mm x 10.5mm FBGA P DA Mark Speed Grade 96-ball 9mm x 14mm FBGA E HA -107 tCK = 1.071ns, CL = 13 96-ball 8mm x 14mm FBGA P TW -125 tCK = 1.25ns, CL = 11 IT Mark V 1. Not all options listed can be combined to define an offered product. Use the part catalog search on http://www.micron.com for available offerings. FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site: http://www.micron.com. 09005aef858c7838 4Gb_DDR3L_addendum.pdf - Rev. C 7/16 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. 4Gb: x8, x16 DDR3L SDRAM Addendum Revision History Revision History Rev. C – 07/16 • Added DA and TW package codes • Added :P Revision code • Removed unused mark options Rev. B – 04/15 • Removed Micron Confidential and Proprietary mark Rev. A – 02/14 • Initial release; based on 4Gb: x4, x8, x16 DDR3L SDRAM, Rev I 09/13 data sheet (09005aef84780270) 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000 www.micron.com/products/support Sales inquiries: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. 09005aef858c7838 4Gb_DDR3L_addendum.pdf - Rev. C 7/16 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved.
MT41K512M8RH-125 V:E TR 价格&库存

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